Optimization of Device Architecture for Enhanced Performance in Deep-Ultraviolet Light-Emitting Diodes

Abstract

Deep-UV LEDs typically refer to ultraviolet LEDs that emit wavelengths of approximately 200–280 nm or <300 nm. Their primary material system is AlGaN, and by adjusting the Al content, the bandgap can be shifted into the deep ultraviolet region to achieve the desired wavelength. Deep-UV LEDs offer advantages such as long lifespan, tunable wavelengths, and mercury-free operation, making them highly promising for sterilization and disinfection, water treatment, medical disinfection, lithography, and specific sensing applications. However, deep ultraviolet LEDs still face bottlenecks such as low internal quantum efficiency, limited external quantum efficiency, and insufficient device lifetime. One core factor contributing to these issues is the challenge in device structural design. Based on understanding the principles of deep-UV LEDs, this paper explores various methods for optimizing device architecture, such as tunnel junctions, nanostructured patterns, and ultra-thin quantum wells, and their impact on the performance of deep-UV LEDs. Ultimately, through these discussions, this review hopes to provide a reference for designing highly efficient, long-lasting deep-UV LEDs and promote their practical application in public health, environmental protection, and industrial manufacturing.