Ultraviolet photodetectors based on wide bandgap semiconductors: A Review

Abstract

This review focuses on ultraviolet (UV) photodetectors based on wide bandgap semiconductors, which are gaining increasing attention for applications in defense, environmental monitoring, and biomedical fields. Materials such as ZnO and Ga₂O₃ offer high thermal stability, strong radiation resistance, and suitable band gaps for solar-blind UV detection. The paper summarizes various detector architectures' characteristics and device performance, including photoconductive, Schottky, metal–semiconductor–metal (MSM), p–n junction, and p–i–n junction types. Their responsivity, response time, dark current, and structural advantages are compared. Key performance enhancement strategies—doping, nanostructuring, and interface engineering—are discussed. Although significant progress has been achieved, challenges remain, including persistent photoconductivity, trade-offs between sensitivity and speed, and fabrication constraints. Future research should focus on novel materials, optimized device structures, and scalable integration techniques to enable high-performance and reliable wide bandgap UV photodetectors for next-generation optoelectronic systems.