Comparative Evaluation of Two-Dimensional Interfacial Control Layers in Memristors

Abstract

 Two dimensional(2D) interfacial and tunneling layers provide a compact route to stabilizing and scaling memristors. This review compares four representative 2D families: graphene and graphene oxide, hexagonal boron nitride, transition metal dichalcogenides, and MXenes. The research describes how these layers regulate charge injection and ion transport, and how those effects map to device and array metrics. Common benefits include lower programming voltage and energy, tighter variability, improved analog update linearity, and mitigation of sneak paths, with trade offs in film transfer, long term stability, and selector integration. The research highlights three practical design levers: layer thickness, contact and work function alignment, and defect or surface termination control, and the research offers concise guidelines for engineering energy efficient, reliable, crossbar compatible memristive systems.