A Review of Extreme Ultraviolet Lithography and Its Future Development Trends

Abstract

Extreme ultraviolet lithography, leveraging a radiation wavelength of 13.5 nm, has become a critical enabling technology for semiconductor fabrication at the 7 nm node and beyond. This paper provides a systematic review of the architectural evolution and development trajectory of EUV lithography, covering its progression from early experimental research in the 1990s to its industrial deployment by leading foundries. The study emphasizes two key performance bottlenecks—EUV light sources and optical systems that are decisive in determining throughput, pattern fidelity, and scalability. In terms of technical advances, this review summarizes recent research efforts to improve laser-to-plasma conversion efficiency, suppress debris contamination, enhance spectral purity, and integrate real-time source control. It also explores innovations in EUV mask design, high-numerical-aperture optical systems, and emerging flat optics technologies. EUV systems face several significant challenges despite continuous progress, including limited source power, thermally induced optical aberrations, and stochastic resist effects at sub-nanometer scales. This paper also discusses several potential solutions, such as free-electron lasers, machine learning-based aberration correction systems, and hybrid lithography strategies that integrate EUV with other patterning techniques. Furthermore, global collaborative initiatives and advancing domestic ecosystems strongly support sustained innovation in this field. By reviewing current progress and outlining future directions, this work aims to offer a comprehensive reference and inspire further exploration in EUV lithography research and industrial implementation.